# Publications

### Oriol T. Valls

**Transport in ferromagnet/superconductor spin valves**Evan Moen and Oriol T. Valls,

*Phys. Rev B 95 054503 (2017)*
Download from https://arxiv.org/abs/1612.04696

**Abstract**

We consider charge transport properties
in realistic, fabricable, Ferromagnet/Superconductor spin valves
having a layered structure $F_1/N/F_2/S$, where $F_1$ and $F_2$ denote the ferromagnets,
$S$ the superconductor, and $N$ the normal metal spacer usually
inserted in actual devices. Our calculation is fully
self-consistent, as required
to ensure that conservation laws are satisfied.
We include
the effects of scattering at all the interfaces. We obtain results for the
device conductance $G$, as a function of bias
voltage, for all values of the angle $\phi$
between the magnetizations of the $F_1$ and $F_2$ layers and a
range of realistic values for the material and geometrical parameters in the sample. We discuss, in the context of our results for $G$, the relative
influence of all parameters on the spin valve properties.
We study also the spin current and the corresponding spin transfer torque in $F_1/F_2/S$
structures.